TP0606N3-G 数据手册
其他文档
TP0606 5 pages
技术规格
- RoHS: true
- Type: P Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Microchip Tech TP0606N3-G
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 1W
- Input Capacitance (Ciss@Vds): 150pF@25V
- Continuous Drain Current (Id): 320mA
- Gate Threshold Voltage (Vgs(th)@Id): 2.4V@1mA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 3.5Ω@750mA,10V
- Package: TO-92-3
- Manufacturer: Microchip Tech
- Series: -
- Packaging: Bulk
- Part Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 320mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 1mA
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 1W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- detail: P-Channel 60V 320mA (Tj) 1W (Tc) Through Hole TO-92-3